The junction is made from Silicon.
Show that the depletion zone is wider on the lower-doped side.
Calculate the diffusion voltage Vd at T=300K as a function of the dopant densities NA=1019cm-3, ND= 1016cm-3 and the intrinsic carriers density (300K). Data : the Boltzamnn constant k=1,38.10-23JK-1 and the electron charge : q=1,602.10-19C.
Give the expression of the depletion zone width w versus NA, ND, Vd and the permittivity . Estimate this width at 300K with the numerical values given in question 2.